Variable bit encoding per NAND flash cell to improve device endurance and extend life of flash-based storage devices

ABSTRACT

Systems, methods, and/or devices are used to implement variable bit encoding to improve device endurance and extend life of storage devices. In some embodiments, the method includes detecting a trigger condition with respect to one or more non-volatile memory portions (e.g., portions configured to store data encoded in a first encoding format) of a plurality of non-volatile memory portions of a storage device. In accordance with detecting the trigger condition, the method includes: determining a current and an estimated endurance metric for the plurality of non-volatile memory portions (e.g., corresponding to estimated endurance after reconfiguration of the one or more portions to store data encoded in a second encoding format), and in accordance with a determination that reconfiguration criteria are satisfied (e.g., the estimated endurance metric comprises an improvement over the current endurance metric), reconfiguring the one or more portions to store data encoded in the second encoding format.

RELATED APPLICATIONS

This application claims priority to U.S. Provisional Patent ApplicationNo. 62/164,473, filed May 20, 2015, which is incorporated by referencein its entirety.

This application is related to U.S. Provisional Patent Application No.62/164,470, filed May 20, 2015, which is incorporated by reference inits entirety. This application is also related to U.S. patentapplication Ser. No. 14/321,701, filed Jul. 1, 2014, which claimspriority to U.S. Provisional Patent Application No. 62/005,908, filedMay 30, 2014, each of which is hereby incorporated by reference in itsentirety.

TECHNICAL FIELD

The disclosed embodiments relate generally to memory systems, and inparticular, to variable bit encoding per NAND flash cell to extend thelife of a flash-based storage device (e.g., comprising one or more flashmemory devices).

BACKGROUND

Semiconductor memory devices, including flash memory, typically utilizememory cells to store data as an electrical value, such as an electricalcharge or voltage. A flash memory cell, for example, includes a singletransistor with a floating gate that is used to store a chargerepresentative of a data value. Some flash memory cells store multiplebits of data (multi-level cell, “MLC”), enhancing data storage densityas compared to single-level cells (SLC) that store one bit of data.However, as a number of bits stored per cell increases, bit errors instored data typically increase and, additionally, an MLC flash memorydevice or MLC memory portion of a flash memory device wears faster andreaches end-of-life conditions faster than an SLC flash memory device orSLC memory portion of a flash memory device. Therefore, MLC flash memorydevices are typically retired or removed from a storage system earlierthan SLC flash memory devices.

SUMMARY

Without limiting the scope of the appended claims, after consideringthis disclosure, and particularly after considering the section entitled“Detailed Description” one will understand how the aspects of variousembodiments are implemented and used to extend the life of flash-basedstorage devices by using variable bit encoding per NAND flash cell. Insome embodiments, a storage controller is configured to performoperations with or on a storage device (e.g., with one or more flashmemory devices). In some embodiments, the storage controller, inresponse to detecting a trigger condition (e.g., the bit error rate forone or more NVM portions is detected to be above a predefinedthreshold), reconfigures one or more non-volatile memory portions for afirst storage density (e.g., 2 bits per cell) to a lower, second storagedensity (e.g., 1 bit per cell). As a result, overall or mean enduranceof the storage device as a whole is improved. In some implementations,the storage controller reconfigures the one or more non-volatile memoryportions only if over-provisioning levels in the storage device willremain sufficient to continue performing background management processes(e.g., garbage collection) that are needed to keep the storage devicefunctioning effectively. In some implementations, the storage controllerreconfigures the one or more non-volatile memory portions only if thereconfiguration will improve the overall or mean endurance of thestorage device.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the present disclosure can be understood in greater detail, amore particular description may be had by reference to the features ofvarious embodiments, some of which are illustrated in the appendeddrawings. The appended drawings, however, merely illustrate pertinentfeatures of the present disclosure and are therefore not to beconsidered limiting, for the description may admit to other effectivefeatures.

FIG. 1 is a block diagram illustrating an implementation of a datastorage system, in accordance with some embodiments.

FIG. 2 is a block diagram illustrating an implementation of a managementmodule, in accordance with some embodiments.

FIG. 3A is a block diagram illustrating mapping data structures and,more specifically, a forward mapping table and a reverse mapping table,in accordance with some embodiments.

FIGS. 3B-3C are block diagrams illustrating data structures for storingcharacterization information, in accordance with some embodiments.

FIG. 4 is a block diagram illustrating a data structure (e.g., anendurance estimation table) for storing endurance estimates fordifferent encoding formats based on various status metrics, inaccordance with some embodiments.

FIG. 5A is a simplified, prophetic diagram representing estimatedendurance of active blocks in a storage device before a storage densityreconfiguration of one or more memory portions of the storage device,including data points representing current mean and projected meanendurance of the storage device as a whole, in accordance with someembodiments.

FIG. 5B is a simplified, prophetic diagram representing estimatedendurance of active blocks in a storage device after a storage densityreconfiguration of one or more memory portions of the storage device,including a data point representing estimated mean endurance of thestorage device as a whole, in accordance with some embodiments.

FIG. 6 illustrates a flowchart representation of a method of processingstorage density reconfigurations in a storage device, in accordance withsome embodiments.

FIGS. 7A-7C illustrate flowchart representations of methods ofprocessing storage density reconfigurations in a storage device, inaccordance with some embodiments.

FIGS. 8A-8B illustrate flowchart representations of methods ofprocessing storage density reconfigurations in a storage device, inaccordance with some embodiments.

In accordance with common practice the various features illustrated inthe drawings may not be drawn to scale. Accordingly, the dimensions ofthe various features may be arbitrarily expanded or reduced for clarity.In addition, some of the drawings may not depict all of the componentsof a given system, method or device. Finally, like reference numeralsmay be used to denote like features throughout the specification andfigures.

DETAILED DESCRIPTION

When a portion of a storage device reaches end-of-life conditions for afirst storage density (e.g., MLC), the portion of the storage device, insome embodiments, has not yet reached end-of-life conditions for asecond storage density (e.g., SLC). Thus, the portion of the storagedevice, in some embodiments, is retired or removed from the storagedevice earlier than is necessary (because the portion of the storagedevice is still usable at the second storage density). Consequently,what is desired are mechanisms for proactively processing storagedensity reconfigurations, in order to prolong the life of flash-basedstorage devices.

Sometimes herein, a memory cell configured to store 1 bit is referred toas an X1 or SLC memory cell, a memory cell configured to store 2 bits isreferred to as an X2 or MLC memory cell, and a memory cell configured tostore 3 bits is referred to as an X3 or TLC memory cell. Additionally, aretired memory cell, which is not available for further programming, isreferred to as an X0 memory cell. Furthermore, sometimes X3, X2, and X1are used to indicate levels of storage density: X3 (three bits permemory cell), X2 (two bits per memory cell) and X1 (one bit per memorycell).

The various implementations described herein include systems, devices,and/or methods that may improve the reliability with which data can beretained by a storage device (e.g., a flash memory device). Someimplementations include systems, devices, and/or methods to reconfigureat least a portion of a memory device from a first storage density to asecond storage density (e.g., from X2 to X1) so as to maximize the lifeof the portion of the memory device and the memory device itself. Insome implementations, the memory cells of a memory device, or a portionof the memory device, are reconfigured from X2 to X1 after reachingend-of-life conditions while the memory cells are operating as X2 memorycells, so as to extend the operating life of the memory device.

(A1) More specifically, some embodiments include a method of operationin a storage device that includes a storage controller (e.g., thestorage controller has one or more physical processors and memory) and aplurality of non-volatile memory portions in one or more memory devices.The method includes detecting a trigger condition with respect to one ormore non-volatile memory portions of the plurality of non-volatilememory portions. The one or more non-volatile memory portions areconfigured to store data encoded in a first encoding format and having afirst storage density (e.g., TLC or MLC) corresponding to the firstencoding format. In response to detecting the trigger condition, and inaccordance with a first determination that a projected amount ofover-provisioning meets predefined over-provisioning criteria, themethod includes reconfiguring the one or more non-volatile memoryportions of the storage device to store data encoded in a secondencoding format and having a second storage density (e.g., SLC)corresponding to the second encoding format. The projected amount ofover-provisioning corresponds to over-provisioning for the storagedevice after (e.g., that would result from) reconfiguring the one ormore non-volatile memory portions of the storage device to store dataencoded in the second encoding format and having the second storagedensity.

(A2) In some embodiments of the method of A1, the second storage densityis a lower storage density than the first storage density (e.g., 1 bitper cell at the second encoding format and 3 bits per cell at the firststorage density), and the storage device has reduced over-provisioningafter the reconfiguring.

(A3) In some embodiments of the method of any one of A1 to A2, themethod further includes determining an estimated endurance metric forthe plurality of non-volatile memory portions of the storage device,corresponding to an estimated endurance for the plurality ofnon-volatile memory portions of the storage device after (e.g., thatwould result from) the reconfiguring. In some embodiments, reconfiguringthe one or more non-volatile memory portions of the storage devicefurther includes reconfiguring the one or more non-volatile memoryportions of the storage device to store data encoded in the secondencoding format and having the second storage density in accordance withthe first determination that the projected amount of over-provisioningmeets the predefined over-provisioning criteria and in accordance with asecond determination that the estimated endurance metric indicates animprovement over the current endurance metric in accordance withpredefined endurance improvement criteria (e.g., the estimated endurancemetric is greater than the current endurance metric).

(A4) In some embodiments of the method of A3, the current endurancemetric for the plurality of non-volatile memory portions corresponds toan average value of an endurance metric with respect to the plurality ofnon-volatile memory portions, and the estimated endurance metric for theplurality of non-volatile memory portions of the storage devicecorresponds to a projected average value of the endurance metric withrespect to the plurality of non-volatile memory portions after thereconfiguring.

(A5) In some embodiments of the method of A4, the endurance metric withrespect to a single memory portion of the plurality of non-volatilememory portions is a value corresponding to a projected number of writeoperations that can be performed, prior to end of life, by the singlememory portion, or a projected number of program/erase cycles that canbe performed, prior to end of life, by the single memory portion.

(A6) In some embodiments of the method of any one of A1 to A5, themethod further includes maintaining one or more status metrics for eachmemory portion of the plurality of non-volatile memory portions of thestorage device. A respective status metric for a respective memoryportion corresponds to the respective memory portion's ability to retaindata. In some embodiments, detecting the trigger condition includes inaccordance with a determination that at least one of the one or morestatus metrics for the one or more non-volatile memory portions of thestorage device satisfies (e.g., is below) a threshold, detecting thetrigger condition as to the one or more non-volatile memory portions ofthe storage device.

(A7) In some embodiments of the method of any one of A1 to A6, themethod further includes maintaining one or more status metrics for eachof the one or more memory devices. A first status metric of the one ormore status metrics corresponds to a respective memory device's abilityto retain data. In accordance with a determination that the one or morestatus metrics for a respective memory device of the one or more memorydevices satisfy one or more end-of-life criteria, the method includesoperating the respective memory device in read-only mode.

(A8) In some embodiments of the method of any one of A1 to A7, the oneor more memory devices comprise one or more flash memory devices.

(A9) In some embodiments of the method of any one of A1 to A8, theprojected amount of over-provisioning represents a first quantity ofstorage units in the storage device, including mapped storage unitsremaining after reconfiguring the one or more non-volatile memoryportions and unmapped storage units that are usable for storing data andthat are remaining after reconfiguring the one or more non-volatilememory portions, and subtracting from the first quantity a quantitycorresponding to a declared storage capacity of the storage device.

(A10) In another aspect, a storage device includes (1) a set of one ormore non-volatile memory devices, the set of one or more non-volatilememory devices including a plurality of non-volatile memory portions and(2) a storage controller, the storage controller including one or morecontroller modules. The one or more controller modules are configured todetect a trigger condition with respect to one or more non-volatilememory portions of the storage device. The one or more non-volatilememory portions are configured to store data encoded in a first encodingformat having a first storage density (e.g., TLC or MLC) correspondingto the first encoding format. In response to detecting the triggercondition, and in accordance with a first determination that a projectedamount of over-provisioning meets predefined over-provisioning criteria,the one or more controller modules are configured to reconfigure the oneor more non-volatile memory portions of the storage device to store dataencoded in a second encoding format and having a second storage density(e.g., SLC) corresponding to the second encoding format. The projectedamount of over-provisioning corresponds to over-provisioning for thestorage device after (e.g., that would result from) reconfiguring theone or more non-volatile memory portions of the storage device to storedata encoded in the second encoding format and having the second storagedensity.

(A11) In some embodiments of the storage device of A10, the one or morecontroller modules include: (1) a trigger condition module to detect thetrigger condition and (2) a reconfiguration module to reconfigure theone or more non-volatile memory portions of the storage device inresponse to the trigger condition and in accordance with the firstdetermination.

(A12) In some embodiments of the storage device of A11, the one or morecontroller modules further include an over-provisioning module todetermine the projected amount of over-provisioning remaining for thestorage device after reconfiguring the one or more non-volatile memoryportions of the storage device to store data encoded in the secondencoding format and having the second storage density.

(A13) In some embodiments of the storage device of A10, the projectedamount of over-provisioning meets the predefined over-provisioningcriteria only when the projected amount of over-provisioning is greaterthan a predetermined minimum amount of over-provisioning for the storagedevice.

(A14) In some embodiments of the storage device of A10 to A13, thestorage device is further configured to perform the method of any one ofA2 to A9 described above.

(A15) In an additional aspect, a storage device includes: (1) a set ofone or more non-volatile memory devices, the set of one or morenon-volatile memory devices including a plurality of non-volatile memoryportions; (2) means for detecting a trigger condition with respect toone or more non-volatile memory portions of the plurality ofnon-volatile memory portions (e.g., the one or more non-volatile memoryportions are configured to store data encoded in a first encoding formatand having a first storage density corresponding to the first encodingformat); (3) means for determining a projected amount ofover-provisioning remaining for the storage device after reconfiguringthe one or more non-volatile memory portions to store data encoded in asecond encoding format and having a second storage density thatcorresponds to the second encoding format and is different from thefirst storage density; and (4) means for reconfiguring, in response todetecting the trigger condition, and in accordance with a firstdetermination that a projected amount of over-provisioning meetspredefined over-provisioning criteria, the one or more non-volatilememory portions so as to store data encoded in the second encodingformat and having the second storage density. The one or morereconfigured non-volatile memory portions have a reduced storagecapacity.

(A16) In some embodiments of the storage device of A15, the storagedevice further includes means for performing the method of any one of A2to A9 described above.

(A17) In yet one further aspect, a non-transitory computer-readablestorage medium is provided. The non-transitory computer-readable storagemedium stores one or more programs configured for execution by one ormore processors of a storage device, the one or more programs includinginstructions for performing the method of any one of A1 to A9 describedabove.

(B1) In another aspect, a method of operation in a storage device thatincludes a storage controller (e.g., the storage controller has one ormore physical processors and memory) and a plurality of non-volatilememory portions in one or more memory devices, includes detecting atrigger condition with respect to one or more non-volatile memoryportions of the storage device. The one or more non-volatile memoryportions are configured to store data encoded in a first encoding formatand having a first storage density corresponding to the first encodingformat. The method includes, in accordance with detecting the triggercondition: (1) determining a current endurance metric for the pluralityof non-volatile memory portions of the storage device; (2) determiningan estimated endurance metric for the plurality of non-volatile memoryportions of the storage device, the estimated endurance metriccorresponding to an estimated endurance for the plurality ofnon-volatile memory portions of the storage device after areconfiguration of the one or more non-volatile memory portions of thestorage device to store data encoded in a second encoding format andhaving a second storage density corresponding to the second encodingformat; and (3) in accordance with a determination that reconfigurationcriteria are satisfied, reconfiguring the one or more non-volatilememory portions of the storage device to store data encoded in thesecond encoding format and having the second storage density. In someembodiments, the reconfiguration criteria include a determination thatthe estimated endurance metric comprises an improvement over the currentendurance metric in accordance with predefined endurance improvementcriteria.

(B2) In some embodiments of the method of B1, the second storage densityis a lower storage density than the first storage density (e.g., 1 bitper cell at the second encoding format and 3 bits per cell at the firststorage density).

(B3) In some embodiments of the method of any one of B1 or B2, thecurrent endurance metric for the plurality of non-volatile memoryportions corresponds to an average value of an endurance metric withrespect to the plurality of non-volatile memory portions, and theestimated endurance metric for the plurality of non-volatile memoryportions of the storage device corresponds to a projected average valueof the endurance metric with respect to the plurality of non-volatilememory portions after the reconfiguring.

(B4) In some embodiments of the method of B3, the endurance metric withrespect to a single memory portion of the plurality of non-volatilememory portions is a value corresponding to a projected number of writeoperations that can be performed, prior to end of life, by the singlememory portion, or a projected number of program/erase cycles that canbe performed, prior to end of life, by the single memory portion.

(B5) In some embodiments of the method of any one of B1 to B4, themethod further includes maintaining one or more status metrics for eachmemory portion of the plurality of non-volatile memory portions of thestorage device. A respective status metric for a respective memoryportion corresponds to the respective memory portion's ability to retaindata. In these embodiments, detecting the trigger condition includes, inaccordance with a determination that at least one of the one or morestatus metrics for the one or more non-volatile memory portions of thestorage device satisfies (e.g., is below) a threshold, detecting thetrigger condition as to the one or more non-volatile memory portions ofthe storage device.

(B6) In some embodiments of the method of any one or B1 to B5, themethod further includes maintaining one or more status metrics for eachof the one or more memory devices. A first status metric of the one ormore status metrics corresponds to a respective memory device's abilityto retain data. In these embodiments, the method includes, in accordancewith a determination that the one or more status metrics for arespective memory device of the one or more memory devices satisfy oneor more end-of-life criteria, operating the respective memory device inread-only mode.

(B7) In some embodiments of the method of any one of B1 to B6, the oneor more memory devices include one or more flash memory devices.

(B8) In another aspect, a storage device includes: (1) a set of one ormore non-volatile memory devices, the set of one or more non-volatilememory devices including a plurality of non-volatile memory portions and(2) a storage controller, the storage controller including one or morecontroller modules. The one or more controller modules are configured todetect a trigger condition with respect to one or more non-volatilememory portions of the storage device. The one or more non-volatilememory portions are configured to store data encoded in a first encodingformat and having a first storage density corresponding to the firstencoding format. The one or more controller modules are furtherconfigured to determine an estimated endurance metric for the pluralityof non-volatile memory portions of the storage device, the estimatedendurance metric corresponding to an estimated endurance for theplurality of non-volatile memory portions of the storage device after areconfiguration of the one or more non-volatile memory portions of thestorage device to store data encoded in a second encoding format andhaving a second storage density corresponding to the second encodingformat. The one or more controller modules are also configured toreconfigure, in accordance with a determination that reconfigurationcriteria are satisfied, the one or more non-volatile memory portions ofthe storage device to store data encoded in the second encoding formatand having the second storage density, the reconfiguration criteriaincluding a determination that the estimated endurance metric comprisesan improvement over the current endurance metric in accordance withpredefined endurance improvement criteria.

(B9) In some embodiments of the storage device of B8, the one or morecontroller modules include: (1) a trigger condition detection module todetect the trigger condition, (2) a metric maintaining module todetermine the estimated endurance metric, and (3) a reconfigurationmodule to reconfigure the one or more non-volatile memory portions ofthe storage device in response to the trigger condition and inaccordance with the determination that the reconfiguration criteria aresatisfied.

(B10) In some embodiments of the storage device of any one of B8 or B9,the storage device is further configured to perform the method of anyone of B2 to B7 described above.

(B11) In yet one more aspect, a storage device includes: (1) a set ofone or more non-volatile memory devices, the set of one or morenon-volatile memory devices including a plurality of non-volatile memoryportions; (2) means for detecting a trigger condition with respect toone or more non-volatile memory portions of the storage device (e.g.,the one or more non-volatile memory portions are configured to storedata encoded in a first encoding format and having a first storagedensity corresponding to the first encoding format); (3) means fordetermining an estimated endurance metric for the plurality ofnon-volatile memory portions of the storage device, the estimatedendurance metric corresponding to an estimated endurance for theplurality of non-volatile memory portions of the storage device after areconfiguration of the one or more non-volatile memory portions of thestorage device to store data encoded in a second encoding format andhaving a second storage density; and (4) means for reconfiguring, inaccordance with a determination that reconfiguration criteria aresatisfied, the one or more non-volatile memory portions of the storagedevice to store data encoded in the second encoding format and havingthe second storage density, the reconfiguration criteria including adetermination that the estimated endurance metric comprises animprovement over the current endurance metric in accordance withpredefined endurance improvement criteria.

(B12) In some embodiments of the storage device of B11, the storagedevice further comprises means for performing the method of any one ofB2 to B7 described above.

(B13) In yet one further aspect, a non-transitory computer-readablestorage medium is provided. The non-transitory computer-readable storagemedium stores one or more programs configured for execution by one ormore processors of a storage device, the one or more programs includinginstructions for performing the method of any one of B1 to B7 describedabove.

Numerous details are described herein in order to provide a thoroughunderstanding of the example embodiments illustrated in the accompanyingdrawings. However, some embodiments may be practiced without many of thespecific details, and the scope of the claims is only limited by thosefeatures and aspects specifically recited in the claims. Furthermore,well-known methods, components, and circuits have not been described inexhaustive detail so as not to unnecessarily obscure pertinent aspectsof the embodiments described herein.

FIG. 1 is a block diagram illustrating an implementation of a datastorage system 100, in accordance with some embodiments. While someexample features are illustrated, various other features have not beenillustrated for the sake of brevity and so as not to obscure pertinentaspects of the example embodiments disclosed herein. To that end, as anon-limiting example, data storage system 100 includes a storage device120 (also sometimes called an information storage device, or a datastorage device, or a memory device), which includes a storage controller124 and a storage medium 132, and is used in conjunction with orincludes a computer system 110 (e.g., a host system or a host computer).In some embodiments, storage medium 132 is a single flash memory devicewhile in other embodiments storage medium 132 includes a plurality offlash memory devices. In some embodiments, storage medium 132 isNAND-type flash memory or NOR-type flash memory. In some embodiments,storage medium 132 includes one or more three-dimensional (3D) memorydevices. Further, in some embodiments, storage controller 124 is asolid-state drive (SSD) controller. However, other types of storagemedia may be included in accordance with aspects of a wide variety ofembodiments (e.g., PCRAM, ReRAM, STT-RAM, etc.). In some embodiments, aflash memory device includes one or more flash memory die, one or moreflash memory packages, one or more flash memory channels or the like. Insome embodiments, data storage system 100 can contain one or morestorage devices 120.

Computer system 110 is coupled to storage controller 124 through dataconnections 101. However, in some embodiments computer system 110includes storage controller 124, or a portion of storage controller 124,as a component and/or as a subsystem. For example, in some embodiments,some or all of the functionality of storage controller 124 isimplemented by software executed on computer system 110. Computer system110 may be any suitable computer device, such as a computer, a laptopcomputer, a tablet device, a netbook, an internet kiosk, a personaldigital assistant, a mobile phone, a smart phone, a gaming device, acomputer server, or any other computing device. Computer system 110 issometimes called a host, host system, client, or client system. In someembodiments, computer system 110 is a server system, such as a serversystem in a data center. In some embodiments, computer system 110includes one or more processors, one or more types of memory, a displayand/or other user interface components such as a keyboard, atouch-screen display, a mouse, a track-pad, a digital camera, and/or anynumber of supplemental I/O devices to add functionality to computersystem 110. In some embodiments, computer system 110 does not have adisplay and other user interface components.

Storage medium 132 is coupled to storage controller 124 throughconnections 103. Connections 103 are sometimes called data connections,but typically convey commands in addition to data, and optionally conveymetadata, error correction information and/or other information inaddition to data values to be stored in storage medium 132 and datavalues read from storage medium 132. In some embodiments, however,storage controller 124 and storage medium 132 are included in the samedevice (i.e., an integrated device) as components thereof. Furthermore,in some embodiments, storage controller 124 and storage medium 132 areembedded in a host device (e.g., computer system 110), such as a mobiledevice, tablet, other computer or computer controlled device, and themethods described herein are performed, at least in part, by theembedded storage controller. Storage medium 132 may include any number(i.e., one or more) of memory devices including, without limitation,non-volatile semiconductor memory devices, such as flash memorydevice(s). For example, flash memory device(s) can be configured forenterprise storage suitable for applications such as cloud computing,for database applications, primary and/or secondary storage, or forcaching data stored (or to be stored) in secondary storage, such as harddisk drives. Additionally and/or alternatively, flash memory device(s)can also be configured for relatively smaller-scale applications such aspersonal flash drives or hard-disk replacements for personal, laptop,and tablet computers.

Storage medium 132 is divided into a number of addressable andindividually selectable blocks, such as selectable portion 133. In someembodiments, the individually selectable blocks are the minimum sizeerasable units in a flash memory device. In other words, each blockcontains the minimum number of memory cells that can be erased withouterasing any other memory cells in the same flash memory device.Typically, when a flash memory block is erased, all memory cells in theblock are erased simultaneously. Each block is usually further dividedinto a plurality of pages and/or word lines, where each page or wordline is typically an instance of the smallest individually accessible(readable) portion in a block. In some embodiments (e.g., using sometypes of flash memory), the smallest individually accessible unit of adata set, however, is a sector, which is a subunit of a page. That is, ablock includes a plurality of pages, each page contains a plurality ofsectors, and each sector is the minimum unit of data for reading datafrom the flash memory device. For example, in some implementations, eachblock includes a number of pages, such as 64 pages, 128 pages, 256 pagesor another suitable number of pages. Blocks are typically grouped into aplurality of zones. Each block zone can be independently managed to someextent, which increases the degree of parallelism for paralleloperations and simplifies management of storage medium 132.

Additionally, if data is written to a storage medium in pages, but thestorage medium is erased in blocks, pages in the storage medium maycontain invalid (e.g., stale) data, but those pages cannot beoverwritten until the whole block containing those pages is erased. Inorder to write to the pages with invalid data, the pages (if any) withvalid data in that block are read and re-written to a new block and theold block is erased (or put on a queue for erasing). This process iscalled garbage collection. After garbage collection, the new blockcontains the pages with valid data and may have free pages that areavailable for new data to be written, and the old block can be erased soas to be available for new data to be written. Since flash memory canonly be programmed and erased a limited number of times, the efficiencyof the algorithm used to pick the next block(s) to re-write and erasehas a significant impact on the lifetime and reliability of flash-basedstorage systems.

While erasure of a storage medium is performed on a block basis, in manyembodiments, reading and programming of the storage medium is performedon a smaller subunit of a block (e.g., on a page basis, word line basis,or sector basis). In some embodiments, the smaller subunit of a blockconsists of multiple memory cells (e.g., single-level cells ormulti-level cells). In some embodiments, programming is performed on anentire page. In some embodiments, a multi-level cell (MLC) NAND flashtypically has four possible states per cell, yielding two bits ofinformation per cell. Further, in some embodiments, an MLC NAND has twopage types: (1) a lower page (sometimes called fast page), and (2) anupper page (sometimes called slow page). In some embodiments, atriple-level cell (TLC) NAND flash has eight possible states per cell,yielding three bits of information per cell. Although the descriptionherein uses TLC, MLC, and SLC as examples, those skilled in the art willappreciate that the embodiments described herein may be extended tomemory cells that have more than eight possible states per cell,yielding more than three bits of information per cell.

The encoding format of the storage media (i.e., TLC, MLC, or SLC and/ora chosen data redundancy mechanism) is a choice made when data isactually written to the storage media. Often in this specification thereis described an event, condition, or process that is said to set,trigger reconfiguration of, or alter the encoding format of the storagemedia, etc. It should be recognized that the actual process may involvemultiple steps, e.g., erasure of the previous contents of the storagemedia followed by the data being written using the new encoding formatand that these operations may be separated in time from the initiatingevent, condition or procedure.

In some embodiments (and as explained in more detail in reference toFIGS. 6, 7A-7C, and 8A-8B below), detecting a trigger condition is saidto trigger a process for determining whether to reconfigure one or moreNVM portions of a plurality of NVM portions (e.g., one or more dieplane, superblocks, blocks, or pages) of a storage device to a newencoding format. In some embodiments, the trigger condition is detectedwith respect to the one or more NVM portions in accordance with one ormore status metrics (e.g., one or more performance metrics correspondingto performance of the storage device, one or more endurance/wear metricscorresponding to wear on the storage device, and/or one or more timemetrics). Status metrics of the storage device include metrics (e.g.,wear metrics such as program-erase (P/E) cycle counts, write operationcounts, and the like) of the non-volatile storage media (e.g., storagemedium 132, FIG. 1) of the storage device, but are not necessarilylimited to such metrics. For example, some metrics (e.g., someperformance metrics, such as latency metrics, metrics that measure howlong it takes or how many operations are required to complete a write orerase operation, etc.) of the storage device reflect both storage mediaperformance as well as controller and/or other storage device componentperformance.

In some embodiments, the storage device keeps track of (i.e., determinesand/or maintains) a number of status metrics. In some embodiments, thestatus metrics tracked by the storage device include a writeamplification metric of the storage device. In some embodiments, thestatus metrics tracked by the storage device include anover-provisioning metric (e.g., the percentage of total storage capacitythat is in excess of the declared capacity of the storage device), and aprojected over-provisioning metric (e.g., the projected or estimatedpercentage of total storage capacity that is in excess of the declaredcapacity of the storage device after a projected conversion of a numberof memory blocks (or other portions of the storage device) from acurrent encoding format (e.g., TLC, MLC and/or data redundancymechanism) to a lower storage density encoding (e.g., MLC, SLC and/ordata redundancy mechanism)). In some embodiments, reconfiguring NVMportions to an encoding format (e.g., the second encoding format)impacts available over-provisioning of the storage device. In someembodiments, over-provisioning refers to the difference between thephysical capacity of the storage device (e.g., the physical capacityless capacity set aside for management data structures and metadata) forstoring user data (e.g., data stored in the storage system on behalf ofa host or host system), and the logical capacity presented as availablefor use by a host or user. For example, in some embodiments, if anon-volatile memory of a storage device has 12 GB of total storagecapacity (e.g., total storage capacity for storing user data) and 10 GBof declared capacity, then the non-volatile memory of the storage devicehas 2 GB of over-provisioning. Unlike declared capacity, which is thestorage capacity available to a host, the extra capacity ofover-provisioning is not visible to the host as available storage.Instead, over-provisioning is used to increase endurance of a storagedevice (e.g., by distributing the total number of writes and erasesacross a larger population of blocks and/or pages over time), improveperformance (e.g., by providing additional buffer space for managing P/Ecycles and improving the probability that a write operation will haveimmediate access to a pre-erased block), and reduce write amplification.

Write amplification is a phenomenon where the actual amount of physicaldata written to a storage medium (e.g., storage medium 132 of storagedevice 120) is a multiple of the logical amount of data written by ahost (e.g., computer system 110, sometimes called a host) to the storagemedium. As discussed above, when a block of storage medium must beerased before it can be re-written, the garbage collection process toperform these operations results in re-writing data one or more times.This multiplying effect increases the number of writes required over thelife of a storage medium, which shortens the time it can reliablyoperate. The formula to calculate the write amplification of a storagesystem is given by equation:

$\frac{{amount}\mspace{14mu}{of}\mspace{14mu}{data}\mspace{14mu}{written}{\mspace{11mu}\;}{to}\mspace{14mu} a\mspace{14mu}{storage}\mspace{14mu}{medium}}{{amount}\mspace{14mu}{of}\mspace{14mu}{data}\mspace{14mu}{written}\mspace{14mu}{by}\mspace{14mu} a\mspace{14mu}{host}}$

One of the goals of any flash memory based data storage systemarchitecture is to reduce write amplification as much as possible sothat available endurance is used to meet storage medium reliability andwarranty specifications. Higher system endurance also results in lowercost as the storage system may need less over-provisioning. By reducingwrite amplification, the endurance of the storage medium is increasedand the overall cost of the storage system is decreased. Generally,garbage collection is performed on blocks (sometimes herein called eraseblocks) with the fewest number of valid pages for best performance andbest write amplification.

Turning back to the discussion of trigger conditions, in someembodiments, the trigger condition is detected in accordance with asingle status metric, or a non-linear and/or linear combination of oneor more status metrics. For example, in some embodiments, the triggercondition is detected by comparing a wear metric such as P/E cyclecounts to a previously determined value, e.g., a threshold value. Insome embodiments, the trigger condition can also be asserted by othermeans, e.g., by a human operator or scheduled by a human operator. Forexample, it may be desirable to initiate a reconfiguration processbecause of the expected availability or unavailability of other datastorage resources.

In some embodiments, the trigger condition is detected in accordancewith historical knowledge of the one or more metrics. For example,historical knowledge can be a running average of one or more metrics. Inanother example, historical knowledge can be used to determine (e.g.,compute) one or more projected values of one or more metrics at aparticular time in the future (e.g., an hour, day, week, or month in thefuture), and the trigger condition can be detected in accordance withthe one or more projected values. The latter methodology can beparticularly useful for avoiding events that result in loss of data(e.g., due to wear out), or more generally for avoiding events thatsignificantly impact on the quality of service provided by a storagesystem, and for enabling a storage system to undertake ameliorativemeasures prior to there being an urgent need to do so. For example, insome embodiments, the trigger condition is detected by comparing ahistorical wear metric such as P/E cycle counts to a previouslydetermined value to anticipate wear out of a portion of the storagemedia. Similarly, in some embodiments, the trigger condition is detectedby comparing a historical metric, such as the bit error rate (BER), orthe rate of change of the metric, BER (of the storage media, or aportion of the storage media), or a projected value (e.g., a projectedBER rate at a particular time in the future, as determined based on acurrent or historical BER and a rate of change of the BER), against apreviously-determined value to anticipate performance degradation due toincreased computation requirements for error correction.

In a storage device with a plurality of memory devices (e.g., aplurality of storage mediums 132), the trigger condition may bedependent on metrics obtained from a plurality of the memory devices.The reconfiguration process may operate on more than one memory deviceat a time, either sequentially or in parallel. For example, a storagedevice may have a fixed maximum rate of capacity reduction independentof how many storage devices are currently being operated on in parallelby the reconfiguration process (e.g., maximum rate of data movementbetween the storage devices while reducing utilization).

Continuing with the description of FIG. 1, in some embodiments, storagecontroller 124 includes a management module 121-1, a host interface 129,a storage medium (I/O) interface 128, and additional module(s) 125.Storage controller 124 may include various additional features that havenot been illustrated for the sake of brevity and so as not to obscurepertinent features of the example embodiments disclosed herein, and adifferent arrangement of features may be possible.

Host interface 129 provides an interface to computer system 110 throughdata connections 101. Similarly, storage medium interface 128 providesan interface to storage medium 132 though connections 103. In someembodiments, storage medium interface 128 includes read and writecircuitry, including circuitry capable of providing reading signals tostorage medium 132 (e.g., reading threshold voltages for NAND-type flashmemory, as discussed below). In some embodiments, connections 101 andconnections 103 are implemented as a communication media over whichcommands and data are communicated, using a protocol such as DDR3, SCSI,SATA, SAS, or the like. In some embodiments, storage controller 124includes one or more processing units (also sometimes called CPUs,processors, microprocessors, or microcontrollers) configured to executeinstructions in one or more programs (e.g., in storage controller 124).In some embodiments, the one or more processors are shared by one ormore components within, and in some cases, beyond the function ofstorage controller 124.

In some embodiments, management module 121-1 includes one or morecentral processing units (CPUs, also sometimes called processors,microprocessors or microcontrollers) 122 configured to executeinstructions in one or more programs (e.g., in management module 121-1).In some embodiments, the one or more CPUs 122 are shared by one or morecomponents within, and in some cases, beyond the function of storagecontroller 124. Management module 121-1 is coupled to host interface129, additional module(s) 125, and storage medium interface 128 in orderto coordinate the operation of these components. In some embodiments,one or more modules of management module 121-1 are implemented inmanagement module 121-2 of computer system 110. In some embodiments, oneor more processors of computer system 110 (not shown) are configured toexecute instructions in one or more programs (e.g., in management module121-2). Management module 121-2 is coupled to storage device 120 inorder to manage the operation of storage device 120.

Additional module(s) 125 are coupled to storage medium interface 128,host interface 129, and management module 121-1. As an example,additional module(s) 125 may include an error control module to limitthe number of uncorrectable errors inadvertently introduced into dataduring writes to memory and/or reads from memory. In some embodiments,additional module(s) 125 are executed in software by the one or moreCPUs 122 of management module 121-1, and, in other embodiments,additional module(s) 125 are implemented in whole or in part usingspecial purpose circuitry (e.g., to perform encoding and decodingfunctions). In some embodiments, additional module(s) 125 areimplemented in whole or in part by software executed on computer system110.

As data storage densities of non-volatile semiconductor memory devicescontinue to increase, stored data is more prone to being stored and/orread erroneously. In some embodiments, error control coding can beutilized to limit the number of uncorrectable errors that are introducedby electrical fluctuations, defects in the storage medium, operatingconditions, device history, write-read circuitry, etc., or a combinationof these and various other factors.

In some embodiments, an error control module, included in additionalmodule(s) 125, includes an encoder and a decoder. In some embodiments,the encoder encodes data by applying an error control code (ECC) toproduce a codeword, which is subsequently stored in storage medium 132.When encoded data (e.g., one or more codewords) is read from storagemedium 132, the decoder applies a decoding process to the encoded datato recover the data, and to correct errors in the recovered data withinthe error correcting capability of the error control code. Those skilledin the art will appreciate that various error control codes havedifferent error detection and correction capacities, and that particularcodes are selected for various applications for reasons beyond the scopeof this disclosure. As such, an exhaustive review of the various typesof error control codes is not provided herein. Moreover, those skilledin the art will appreciate that each type or family of error controlcodes may have encoding and decoding algorithms that are particular tothe type or family of error control codes. On the other hand, somealgorithms may be utilized at least to some extent in the decoding of anumber of different types or families of error control codes. As such,for the sake of brevity, an exhaustive description of the various typesof encoding and decoding algorithms generally available and known tothose skilled in the art is not provided herein.

In some embodiments, during a write operation, host interface 129receives data to be stored in storage medium 132 from computer system110. The data received by host interface 129 is made available to anencoder (e.g., in additional module(s) 125), which encodes the data toproduce one or more codewords. The one or more codewords are madeavailable to storage medium interface 128, which transfers the one ormore codewords to storage medium 132 in a manner dependent on the typeof storage medium being utilized.

In some embodiments, a read operation is initiated when computer system(host) 110 sends one or more host read commands (e.g., via dataconnections 101, or alternatively a separate control line or bus) tostorage controller 124 requesting data from storage medium 132. Storagecontroller 124 sends one or more read access commands to storage medium132, via storage medium interface 128, to obtain raw read data inaccordance with memory locations (or logical addresses, objectidentifiers, or the like) specified by the one or more host readcommands. Storage medium interface 128 provides the raw read data (e.g.,comprising one or more codewords) to a decoder (e.g., in additionalmodule(s) 125). If the decoding is successful, the decoded data isprovided to host interface 129, where the decoded data is made availableto computer system 110. In some embodiments, if the decoding is notsuccessful, storage controller 124 may resort to a number of remedialactions or provide an indication of an irresolvable error condition.

FIG. 2 is a block diagram illustrating a management module 121-1, inaccordance with some embodiments, as shown in FIG. 1. Management module121-1 typically includes one or more processing units (sometimes calledCPUs or processors) 122-1 for executing modules, programs, and/orinstructions stored in memory 206 (and thereby performing processingoperations), memory 206 (sometimes called controller memory), and one ormore communication buses 208 for interconnecting these components. Theone or more communication buses 208 optionally include circuitry(sometimes called a chipset) that interconnects and controlscommunications between system components. Management module 121-1 iscoupled to host interface 129, additional module(s) 125, and storagemedium I/O 128 by the one or more communication buses 208.

Memory 206 includes high-speed random access memory, such as DRAM, SRAM,DDR RAM, or other random access solid state memory devices, and mayinclude non-volatile memory, such as one or more magnetic disk storagedevices, optical disk storage devices, flash memory devices, or othernon-volatile solid state storage devices. Memory 206 optionally includesone or more storage devices remotely located from the CPU(s) 122-1.Memory 206, or alternatively the non-volatile memory device(s) withinmemory 206, comprises a non-transitory computer readable storage medium.

In some embodiments, memory 206, or the non-transitory computer-readablestorage medium of memory 206 stores the following programs, modules, anddata structures, or a subset or superset thereof:

-   -   garbage collection module 210 that is used for garbage        collection for one or more blocks in a storage medium (e.g.,        storage medium 132, FIG. 1);    -   mapping module 212 that is used for mapping (e.g., using a        mapping table) logical addresses (e.g., a logical block address,        “LBA”) in a logical address space to physical addresses (e.g.,        physical page numbers, “PPN”) in a physical address space, and        for maintaining and updating one or more address mapping tables        and/or related data structures;    -   data read module 214 that is used for reading data from one or        more codewords, pages, or blocks in a storage medium (e.g.,        storage medium 132, FIG. 1);    -   data write module 216 that is used for writing data to one or        more codewords, pages, or blocks in a storage medium (e.g.,        storage medium 132, FIG. 1);    -   data erase module 218 that is used for erasing data from one or        more blocks in a storage medium (e.g., storage medium 132, FIG.        1);    -   wear leveling module 220 that is used for determining pages or        blocks of a storage device (e.g., storage device 120, FIG. 1)        for storing data so as to evenly wear the pages or blocks of the        storage device;    -   over-provisioning module 222 that is used for monitoring and/or        measuring a current amount (or level of) over-provisioning in a        storage device (e.g., storage device 120, FIG. 1) and for        determining a projected amount of over-provisioning remaining        for the storage device after reconfiguring one or more portions        (e.g., non-volatile memory portions, such as die plane,        superblocks, blocks, or pages) of the storage device;    -   metric maintaining module 224 that is used for generating and/or        obtaining one or more metrics of a storage device (e.g., storage        device 120, FIG. 1A), optionally including:        -   one or more endurance estimation table(s) 226 that is(are)            used for storing information about metrics (e.g., status            metrics) and corresponding endurance estimates at each            available encoding format (e.g., SLC, MLC, and TLC);    -   trigger condition detection module 228 that is used for        detecting a trigger condition (e.g., in accordance with one or        more endurance and/or status metrics of a storage device or of        one or more memory portions of the storage device);    -   reconfiguration module 230 that is used for reconfiguring one or        more portions (e.g., non-volatile memory portions, such as die        plane, superblocks, blocks, or pages) of a storage device (e.g.,        storage device 120, FIG. 1);    -   reverse mapping table(s) 232 that is(are) used for translating a        physical address in a physical address space (e.g., a physical        flash address, such as a physical page number, “PPN”) of        non-volatile memory in a storage device (e.g., storage device        120, FIG. 1) to a logical address in a logical address space        (e.g., an LBA) from the perspective of a host (e.g., computer        system 110, FIG. 1) and is also optionally used for storing an        encoding format, current endurance metric, status metric(s), and        other information (as described in more detail below in        reference to FIG. 3A); and    -   forward mapping tables 234 that is(are) used for translating a        logical address in a logical address space (e.g., an LBA) from        the perspective of a host (e.g., computer system 110, FIG. 1) to        a physical address in a physical address space (e.g., a “PPN”)        of non-volatile memory in a storage device (e.g., storage device        120, FIG. 1).

Each of the above identified elements may be stored in one or more ofthe previously-mentioned memory devices, and corresponds to a set ofinstructions for performing a function described above. The aboveidentified modules or programs (i.e., sets of instructions) need not beimplemented as separate software programs, procedures or modules, andthus various subsets of these modules may be combined or otherwisere-arranged in various embodiments. In some embodiments, memory 206 maystore a subset of the modules and data structures identified above.Furthermore, memory 206 may store additional modules and data structuresnot described above. In some embodiments, the programs, modules, anddata structures stored in memory 206, or the non-transitory computerreadable storage medium of memory 206, provide instructions forimplementing some of the methods described below. In some embodiments,some or all of these modules may be implemented with specializedhardware circuits that subsume part or all of the module functionality.

Although FIG. 2 shows management module 121-1 in accordance with someembodiments, FIG. 2 is intended more as a functional description of thevarious features which may be present in management module 121-1 than asa structural schematic of the embodiments described herein. In practice,and as recognized by those of ordinary skill in the art, the programs,modules, and data structures shown separately could be combined and someprograms, modules, and data structures could be separated.

FIG. 3A is a block diagram illustrating mapping data structures and,more specifically, a forward mapping table and a reverse mapping table,in accordance with some embodiments. In some embodiments, one or moreforward mapping tables (e.g., forward mapping table(s) 302) are used fortranslating a logical address in a logical address space (e.g., an LBA)from the perspective of a host (e.g., computer system 110, FIG. 1) to aphysical address in a physical address space (e.g., a “PPN”) ofnon-volatile memory in a storage device (e.g., storage device 120, FIG.1). In some embodiments, one or more reverse mapping tables (e.g.,reverse mapping table(s) 304) are used for translating a PPN ofnon-volatile memory in the storage device to a logical address in alogical address space (e.g., an LBA) from the perspective of the host.In some embodiments, in addition to storing this mapping information,the reverse mapping tables are also used for storing information(sometimes called metadata) about NVM portions (e.g., blocks orsuperblocks) of the storage device, examples of which are an encodingformat, a current endurance metric, and status metric(s) for each NVMportion.

For example, as illustrated in FIG. 3A, a reverse mapping table containsmapping records 304-a through 304-z. In some embodiments, each mappingrecord in the reverse mapping table stores the following information anddata structures, or a subset or superset thereof:

-   -   mapping information (e.g., mapping information 304-a(1)) that        identifies one or more logical addresses in a logical address        space (e.g., an LBA) that is mapped to one or more physical        addresses associated with the mapping record;    -   encoding format (e.g., encoding format 304-a(2)) information        about a currently-configured encoding format (e.g., SLC, MLC, or        TLC) for one or more non-volatile memory portions corresponding        to the one or more physical addresses associated with the        mapping record;    -   a current endurance metric (e.g., current endurance metric        304-a(3)) that reflects estimated endurance (e.g., estimated        number of P/E cycles remaining, or estimated number of write        operations remaining) at the currently-configured encoding        format for the one or more non-volatile memory portions        corresponding to the one or more physical addresses associated        with the mapping record;    -   status metrics (e.g., status metrics 304-a(4)) including one or        more of program/erase (“P/E”) cycles (e.g., P/E cycles 304-a(5))        indicating a current count of the number of P/E cycles performed        on the one or more non-volatile memory portions, bit error rate        (e.g., bit error rate 304-a(6)) indicating or corresponding to a        number of errors included in a codeword read from a page of the        one or more non-volatile memory portions or an average number of        errors included in the previous N codewords read from page(s) of        the one or more non-volatile memory portions, and read retry        count (e.g., retry count 304-a(7) indicating a highest number of        read retries required to successfully read a codeword from the        one or more non-volatile memory portions); in some embodiments,        instead of (or in addition to) the read retry count, the status        metrics include an erase retry count, indicating a highest        number of retries required to successfully erase a block        corresponding to the mapping record; and    -   other information (e.g., other information 304-a(9)) about the        one or more non-volatile memory portions corresponding to the        one or more physical address associated with the mapping record        (the other information, in some embodiments, includes other        usage information indicating the health, performance, and/or        endurance of the one or more non-volatile memory portions, such        as total bytes written, ECC strength, and/or wear leveling        data).

Although FIG. 3A shows reverse mapping table(s) 304 and, in particular,each mapping record contained therein (e.g., mapping record 304-a) inaccordance with some embodiments, FIG. 3A is intended more as an exampleof how to store the various information and data structures which may bepresent in reverse mapping table(s) 304. In practice, and as recognizedby those of ordinary skill in the art, the information and datastructures shown separately could be combined and some information anddata structures could be separated. For example, status metrics304-a(4), in some embodiments, are implemented using a single statusmetric while, in other embodiments, status metrics 304-a(4) represent acombined status metric that takes into account a number of subsidiarystatus metrics (such as a combined status metric based on a combinationof bit error rate, retry count, and estimated P/E cycles remaining).

FIGS. 3B-3C are block diagrams illustrating alternative data structuresfor storing status metrics (i.e., alternatives to storing status metricsin reverse mapping table(s), as shown in FIG. 3A) and othercharacterization information about one or more NVM portions of a storagedevice. In some embodiments, the information contained within eachmapping record other than the mapping information (e.g., encodingformat, current endurance metric, status metric(s), and otherinformation) is referred to as characterization data. In someembodiments, the characterization data is stored in a characterizationvector table, which is a data structure that includes a collection ofcharacterization vectors, instead of the reverse mapping table(s).

FIG. 3B is a block diagram illustrating an implementation of acharacterization vector table 334, in accordance with some embodiments.Characterization vector table 334 includes a collection ofcharacterization vectors 335, optionally implemented as a collection oftuples for efficient storage, that each store characterization dataassociated with a respective portion of storage device 120 (e.g., adistinct memory device, die, block, word line, word line zone, or pageportion). In some embodiments, each vector (e.g., vector 335-1, vector335-2, . . . , vector 335-N) in the collection of characterizationvectors 335 stores characterization data (e.g., as shown in FIG. 3C,bytes written 360, P/E cycles 362, bit error rate (BER) 364, and/orother usage information 366) for a respective portion of storage device120. In some implementations, the characterization data stored incharacterization vectors 335 is statistically derived.

For example, without limitation, in some embodiments in which storagedevice 120 (FIG. 1) includes multiple memory devices, characterizationvector table 334 includes at least one characterization vector for eachdistinct memory device of storage device 120. In another example,without limitation, in some embodiments in which storage device 120(FIG. 1) includes multiple blocks, characterization vector table 334includes at least one characterization vector for each distinct block ofstorage device 120. In another example, in some embodiments,characterization vector table 334 includes a set of distinctcharacterization vectors 335 for each block of storage device 120, andthe set of distinct characterization vectors 335 for each die includesat least one distinct characterization vector for each word line or pagein the block. More detailed example implementations of characterizationvectors 335 are described below with reference to FIG. 3C.

FIG. 3C is a schematic diagram of an implementation of a representativecharacterization vector 350 (e.g., corresponding to any one ofcharacterization vectors 335 shown in FIG. 3B) in accordance with someembodiments. In some embodiments, for a respective portion of storagedevice 120, characterization data stored in characterization vector 350includes one or more of the following fields: (i) a storage densityfield 352 indicating the current storage density of memory cells in therespective portion of storage device 120 such as X3 (i.e., 3 bits permemory cell), X2 (i.e., 2 bits per memory cell), X1 (i.e., SLC or 1 bitper memory cell), or X0 (i.e., retired memory cells); (ii) a free spacefield 354 indicating the amount of free space available in therespective portion of storage device 120; and (iii) a storage capacityfield 356 indicating the advertised (or declared storage) capacity tothe host (e.g., computer system 110, FIG. 1) or the total capacity ofthe respective portion of storage device 120 (or a portion thereof). Forexample, in some implementations, the characterization vectors 335 forblocks or superblocks of the storage device 120 include the storagedensity field 352, but not a storage capacity field 356 and a free spacefield 354. Continuing with this example, a characterization vector forthe entire storage device 120, or for each die or group of die in thestorage device, includes a storage capacity field 356 and a free spacefield 354.

In some embodiments, characterization data stored in characterizationvector 350 for a respective portion of storage device 120 also includesone or more status metrics 358, non-limiting examples of which include:(a) a bytes written field 360 indicating a number of bytes of datawritten to the respective portion of storage device 120; (b) a P/E cyclefield 362 indicating a current count of the number of program-erasecycles performed on the respective portion of storage device 120; (c) abit error rate (BER) field 364 indicating a number of errors detected ina codeword read from a page of the respective portion of storage device120 or an average number of errors detected in the previous N codewordsread from page(s) of the respective portion of storage device 120, whereN is an integer greater than 1; and (d) other usage information 366indicating the health, performance, and/or endurance of the respectiveportion of storage device 120.

In some embodiments, an exemplary status metric is aconsistently-measured BER value at a consistently-referenced encodingformat (e.g., lower page of SLC) for each NVM portion of the storagedevice. In some embodiments, the storage device periodically updatesstatus metrics by erasing a memory portion, writing test data to thelower page of the memory portion in SLC mode, reading back the test datato determine a current BER, and storing the determined BER as the statusmetric. Additional details regarding this exemplary status metric areprovided below, in reference to FIG. 7C.

In some embodiments, characterization data stored in characterizationvector 350 optionally includes a combined status metric for therespective portion of storage device 120. In some embodiments, thecombined status metric is associated with the output of a predefinedalgorithm (e.g., computed by metric maintaining module 224, FIG. 2) thattakes into account one or more usage parameters associated with therespective portion of storage device 120. For example, the predefinedalgorithm incorporates one or more of: (a) a number of bytes written tothe respective portion of storage device 120; (b) a number of P/E cyclesperformed on the respective portion of storage device 120; (c) a BER forcodewords read from the respective portion of storage device 120; and(d) other usage information associated with the respective portion ofstorage device 120 (e.g., temperature, operating conditions, etc.).

FIG. 4 is a block diagram illustrating a data structure (e.g., anendurance estimation table 226) for storing endurance estimates fordifferent encoding formats based on various status metrics (or variousvalues of a single status metric) associated with a particular NVMportion of a storage device, in accordance with some embodiments. Insome embodiments, a particular endurance estimation table 226 is used tostore endurance estimates for different encoding formats (e.g., SLC,MLC, and TLC) based on various values of a first status metric (e.g., aconsistently-measured bit error rate of the lower page of a flash memorycell) and one or more other endurance estimation tables 226 are used tostore endurance estimates for different encoding formats (e.g., SLC,MLC, and TLC) based on various values for one or more other statusmetrics that are distinct from the first status metric (e.g., retryrate, P/E cycles, number of total bytes written, or a combined statusmetric). Therefore, a particular memory device of a storage device(e.g., storage medium 132, FIG. 1, or a portion thereof, such as a firstdie of the storage medium 132), in some embodiments, is associated withone or more endurance estimation tables depending on the number and typeof status metrics used to monitor the health of NVM portions within theparticular memory device. As one example, if the particular memorydevice uses BER as the status metric to monitor health of a first dieand uses P/E cycles to monitor health of a second die, then theparticular memory device would be associated with two enduranceestimation tables (a first endurance estimation table that providesendurance estimates for various BER values and a second enduranceestimation table that provides endurance estimates for various values ofP/E cycles remaining).

In some embodiments, each endurance estimation table associated with astorage device is pre-populated (i.e., prior to the storage device beingshipped) with default endurance estimation values. In some embodiments,the default endurance estimation values are determined by a manufacturerof the storage device based on characterization of similar storagedevices having various values for various status metrics at each of theencoding formats included in each endurance estimation table. In someembodiments, the default endurance estimation values are updated duringa firmware update process at the storage device based on updatedcharacterization data (including characterization data that, in someembodiments, is reported by the storage device back to the manufacturerduring the life of the storage device) for the similar storage devices.

In some embodiments, at least some of the values for the status metricthat are included in each endurance estimation table (e.g., Metric-1,Metric-2, etc.) are predetermined such that the values reflect certainendurance thresholds that are satisfied as a storage device ages. Forexample, successive values of the status metric values in the enduranceestimation table are selected to correspond to estimated successivedecreases in the number of remaining P/E cycles for a representativeencoding format (e.g., the status metric values selected correspond toan estimated decrease of 30 P/E cycles for TLC mode). In someembodiments, a change in status metric value from one value to the nextin the set of the status metric values in the table corresponds to anestimated decrease of 50, 75, or 100 P/E cycles for TLC mode. In otherembodiments, the values selected correspond to a representative set ofall possible values for the status metric.

An exemplary endurance estimation table is illustrated in FIG. 4. Asshown, the endurance estimation table contains records 402-1 through402-last and optionally contains a header 402-0. Header 402-0, in someembodiments, contains a brief description of each field of information(e.g., each field associated with each of the records) stored within theendurance estimation table. In this non-limiting example, header 402-0contains fields for “Status Metric” (e.g., a description of the statusmetric used in the endurance estimation table), “Endurance Estimate forTLC” (e.g., a value or a plurality of values describing an enduranceestimate for an NVM portion configured to operate in TLC mode),“Endurance Estimate for MLC” (e.g., a value or a plurality of valuesdescribing an endurance estimate for an NVM portion configured tooperate in MLC mode), and “Endurance Estimate for SLC” (e.g., a value ora plurality of values describing an endurance estimate for an NVMportion configured to operate in SLC mode).

In some embodiments, one or more of record 402-1 through 402-lastcontains one or more additional fields, such as a “reconfigurationcriteria” field that identifies criteria that must be satisfied prior toreconfiguring a particular NVM portion (e.g., a threshold number ofestimated P/E cycles that will be available after reconfiguring theparticular NVM portion).

As pictured in FIG. 4, records 402-1 through 402-last containinformation corresponding to endurance estimates for a NVM portion basedon the NVM portion having various values for a particular status metric.Stated another way, an endurance estimated for a particular NVM portioncan be retrieved from the endurance estimation table by performing alookup with a current value of the status metric for the NVM portion andthe NVM portion's current encoding format. Record 402-1 indicates thatwhen the NVM portion has a value of Metric-1 for the status metric,then: (i) the estimated endurance for the NVM portion configured tooperate in TLC mode is 100% and 300 P/E cycles, (ii) the estimatedendurance for the NVM portion configured to operate in MLC mode is 100%and 5000 P/E cycles, and (iii) the estimated endurance for the NVMportion configured to operate in SLC mode is 100% and 20000 P/E cycles.Record 402-2 indicates that when the NVM portion has a value of Metric-2for the status metric, then: (i) the estimated endurance for the NVMportion configured to operate in TLC mode is 83% and 250 P/E cycles,(ii) the estimated endurance for the NVM portion configured to operatein MLC mode is 90% and 4500 P/E cycles, and (iii) the estimatedendurance for the NVM portion configured to operate in SLC mode is 99%and 19800 P/E cycles. Record 402-n indicates that when the NVM portionhas a value of Metric-n for the status metric, then: (i) the estimatedendurance for the NVM portion configured to operate in TLC mode is 0%and 0 P/E cycles, (ii) the estimated endurance for the NVM portionconfigured to operate in MLC mode is 40% and 2000 P/E cycles, and (iii)the estimated endurance for the NVM portion configured to operate in SLCmode is 75% and 15000 P/E cycles. Record 402-last indicates that whenthe NVM portion has a value of Metric-last for the status metric (e.g.,metric-last is a value for the status metric that is determined toreflect end-of-life status for the NVM portion), then: (i) the estimatedendurance for the NVM portion configured to operate in TLC mode is 0%and 0 P/E cycles, (ii) the estimated endurance for the NVM portionconfigured to operate in MLC mode is 0% and 0 P/E cycles, and (iii) theestimated endurance for the NVM portion configured to operate in SLCmode is 0% and 0 P/E cycles.

In some embodiments, in order to prolong the life of a storage devicethrough a process of reconfiguring individual NVM portions of thestorage device, one or more endurance estimation tables 226 are used toestimate current and projected mean endurance values for a plurality ofNVM portions of a storage device. For example, FIG. 5A is a simplified,prophetic diagram representing estimated endurance of active blocks(e.g., blocks that are actively used to fulfill read, write, unmap, anderase requests received from a host) in a plurality of NVM portions of astorage device before processing storage density reconfigurations,including data points representing current mean and projected meanendurance of a storage device as a whole, in accordance with someembodiments.

As shown in FIG. 5A, by reconfiguring individual NVM portions of astorage device (e.g., reconfiguration candidates 508), the projectedmean endurance for the storage device as a whole is expected, in thisexample, to increase, thus lengthening the useful life of the storagedevice. The x-axis of the diagram shown in FIG. 5A represents estimatedendurance (in P/E cycles) for individual NVM portions. In someembodiments, the scale of the x-axis extends from 0 (end-of-life for theNVM portion, so no P/E cycles remain) to 20000 (beginning of life forthe NVM portion configured to operate in SLC mode). The curve shown indiagram 500 represents a distribution of estimated P/E cycles remainingacross all NVM portions of the storage device (or a portion thereof). Insome embodiments, the curve 500 represents a distribution of estimatedP/E cycles remaining across a single NVM die of the storage device.

In some embodiments, an endurance threshold (e.g., endurance threshold506) is established (e.g., predefined or established on an ad hoc basisin response to changes to the overall estimated endurance of the storagedevice over time) that indicates when a NVM portion is a candidate forreconfiguration to a different encoding format. In the example shown inFIG. 5A, before reconfiguring the NVM portions that are candidates forreconfiguration, a current mean estimated endurance for the storagedevice is a first value (e.g., current mean est. endurance 502) and amean projected endurance is a second value that is greater than thefirst value (mean projected endurance 504). In some embodiments, thestorage device (or a component thereof, such as metric maintainingmodule 224, trigger condition detection module 228, and/orreconfiguration module 230) determines the mean projected endurance byretrieving an endurance estimate at a new encoding format for eachreconfiguration candidate from one of the one or more enduranceestimation tables (e.g., endurance estimation table 226, FIG. 4) andaveraging the retrieved endurance estimates with current enduranceestimates of the remaining NVM portions (e.g., those that are notreconfiguration candidates), in order to determine the mean projectedendurance of the storage device after reconfiguration of thereconfiguration candidates.

Turning now to FIG. 5B, a simplified, prophetic diagram representingestimated endurance of active blocks (e.g., blocks that are activelyused to fulfill write, unmap, and erase requests received from a host)in a storage device after processing storage density reconfigurations,including a data point representing estimated mean endurance of thestorage device as a whole, in accordance with some embodiments, isshown.

As illustrated in FIG. 5B, after reconfiguring the reconfigurationcandidates, the current endurance estimates for each reconfigurationcandidate are updated (e.g., by determining a new value for the statusmetric after reconfiguration to the new encoding format and storing thenew value in an appropriate record of a data structure, see FIGS.3A-3C). As shown, current endurance estimates for the reconfigurationcandidates (e.g., reconfigured blocks) increase after reconfigurationand, thus, all or substantially all of the reconfiguration candidatesmove to higher estimated endurance values, as shown in diagram 510(e.g., reconfigured blocks 512). Also, the mean estimated enduranceafter reconfiguration (e.g., mean est. endurance after reconfiguration514) is substantially the same value as the mean projected endurance 504of graph 500 (FIG. 5A). Stated another way, the storage device achievesan improved overall estimated endurance after processing storage densityreconfigurations for the reconfiguration candidates, and the improvedoverall estimated endurance (e.g., mean est. endurance afterreconfiguration) is substantially the same as the projected meanendurance that was determined before processing the reconfigurations. Inthis way, the storage device reliably predicts an improved overallestimated endurance that will be achieved by reconfiguring identifiedreconfiguration candidates.

FIG. 6 illustrates a flowchart representation of a method of processingstorage density reconfigurations within a storage system, in accordancewith some embodiments. With reference to the data storage system 100pictured in FIG. 1, in some embodiments, a method 600 is performed by astorage device (e.g., storage device 120) or one or more components ofthe storage device (e.g., storage controller 124). In some embodiments,the method 600 is governed by instructions that are stored in anon-transitory computer-readable storage medium and that are executed byone or more processors of a device, such as the one or more processingunits (CPUs) 122-1 of management module 121-1 (FIG. 2). In someembodiments, some of the operations of method 600 are performed at ahost system (e.g., computer system 110) that is operatively coupled withthe storage device and other operations of method 600 are performed atthe storage device. In some embodiments, method 600 is governed, atleast in part, by instructions that are stored in a non-transitorycomputer-readable storage medium and that are executed by one or moreprocessors of the host system (the one or more processors of the hostsystem are not shown in FIG. 1). For ease of explanation, the followingdescribes method 600 as performed by the storage device (e.g., bystorage controller 124 of storage device 120, FIG. 1). With reference toFIG. 2, in some embodiments, the operations of method 600 are performed,at least in part, by a metric maintaining module (e.g., metricmaintaining module 224, FIG. 2), a trigger condition detection module(e.g., trigger condition detection module 228, FIG. 2), areconfiguration module (e.g., reconfiguration module 230, FIG. 2), andan over-provisioning module (e.g., over-provisioning module 222, FIG. 2)of management module 121-1.

In some embodiments, processing storage density reconfigurations method600 begins when the storage device (e.g., storage device 120, FIG. 1, ora component thereof such as trigger condition detection module 228, FIG.2) detects (602) a trigger condition with respect to (“w/r/t”) a memoryportion (e.g., a die, die plane, superblock, block, or page of thestorage device). In some embodiments, the storage device includes aplurality of NVM portions (e.g., a plurality of die, die planes,superblocks, blocks, or pages) in one or more memory devices (e.g., oneor more die in one or more storage mediums 132, FIG. 1). For explanatorypurposes with reference to processing storage density reconfigurationsmethod 600, the memory portion is described as a first block of aplurality of blocks in a first die (i.e., memory device) of the storagedevice.

In some embodiments, the trigger condition is detected when a firststatus metric for the first block satisfies a threshold. For example,trigger condition detection module 228 and/or metric maintaining module224 determine that a BER for the first block is above a threshold BERvalue or an estimated number of remaining P/E cycles for the first blockis below an endurance threshold (such as endurance threshold 506, FIGS.5A-5B). The trigger condition, in some embodiments, is based on thecurrent encoding format of the memory portion (e.g., the first block).The above discussion regarding FIGS. 3A-3C includes additional detailsconcerning exemplary status metrics. The storage device then optionallyconducts a first determination (604) as to whether a second statusmetric (distinct from the first status metric for the first block) forthe first die (or the storage medium including the first die) satisfiesend-of-life (EOL) criteria. In accordance with the first determinationindicating that the second status metric satisfies (612—Yes) the EOLcriteria, the storage device operates the first die (or the storagemedium including the first die) in read-only mode.

In some embodiments, in accordance with the first determination insteadindicating that the second status metric does not satisfy (612—No) theEOL criteria, the storage device proceeds to optionally conduct a seconddetermination (606) as to whether reconfiguring the first block willimprove endurance (or will satisfy predefined endurance improvementcriteria) of a predefined portion of the storage device (e.g., the firstdie as a whole, a die plane portion of the first die that includes thefirst block, or a superblock portion of the first die that includes thefirst block, or the first block itself). In accordance with the seconddetermination indicating that reconfiguring the first block will notimprove endurance for the predefined portion of the first die (606—No),the storage device does not reconfigure (i.e., the storage deviceforgoes reconfiguring) the first block (614) and the method 600 returnsto processing step 602 when a trigger condition is again detected. Insome embodiments, improved endurance is defined in reference topredefined endurance improvement criteria (as described below inreference to processing step 734, FIG. 7C, and in reference toprocessing step 830, FIG. 8B).

In some embodiments, in accordance with the second determination insteadindicating that reconfiguring the first block will improve endurance (orwill satisfy predefined endurance improvement criteria) for thepredefined portion of the first die (606—Yes), the storage deviceproceeds to optionally conduct a third determination (608) as to whetherreconfiguring the first block will result in over-provisioning (e.g., aprojected amount of over-provisioning for the storage device as a whole,including all memory devices or die) satisfying (e.g., greater than) apredetermined minimum amount of over-provisioning. In accordance withthe third determination indicating that reconfiguring the first blockwill not result (608—No) in over-provisioning for the storage devicesatisfying the predetermined minimum amount of over-provisioning, thestorage device does not reconfigure the first block (614) and the method600 returns to processing step 602 when a trigger condition is againdetected.

In some embodiments, conducting the third determination includescalculating a projected storage capacity of the storage device afterreconfiguring the first block, and determining a projected size of anover-provisioning pool by subtracting from the projected storagecapacity a declared capacity of the storage device. Reconfiguring thefirst block to store data at an encoding format having a lower storagedensity (e.g., reconfiguring the first block from TLC to SLC mode)reduces storage capacity of the storage device, and thus reducesover-provisioning (e.g., by reducing the size of the over-provisioningpool). Therefore, the third determination helps to protect the amount ofover-provisioning for the storage device by ensuring that repurposingblocks from the over-provisioning pool will not result in dropping theamount of over-provisioning in the storage device to an unacceptablelevel (i.e., a level below the predetermined minimum amount ofover-provisioning).

In some embodiments, in accordance with the third determination insteadindicating that reconfiguring the first block will result (608—Yes) inover-provisioning for the storage device satisfying the predeterminedminimum amount of over-provisioning, the storage device reconfigures(610) the first block from a currently-configured first encoding formathaving a first storage density (e.g., TLC) to a second encoding formathaving a second storage density (e.g., MLC).

In some embodiments, method 600 reduces over-provisioning levels andincludes: (1) detecting a wear condition as to one or more NVM portionsof the storage device, in which a total storage capacity of thenon-volatile memory of the storage device includes declared capacity andover-provisioning, and (2) in response to detecting the wear condition,performing a remedial action that reduces over-provisioning of thenon-volatile memory of the storage device without reducing declaredcapacity of the non-volatile memory of the storage device. In someembodiments, performing a remedial action that reduces over-provisioningincludes marking one or more blocks of the non-volatile memory asunusable. In some embodiments, performing a remedial action that reducesover-provisioning includes reconfiguring (or converting) one or more MLCblocks to SLC, or more generally, changing the physical encoding formatof one or more NVM portions of the storage device. In some embodiments,reducing over-provisioning is performed by an over-provisioning moduleof management module 121 (e.g., over-provisioning module 222, FIG. 2).

Although the first, second, and third determinations above have all beendescribed as optional, in some embodiments, at least one or both of thesecond and third determinations are required. Thus, in some embodiments,processing storage density reconfigurations method 600 requires onlyconducting the second determination after detecting the triggercondition (602), while in other embodiments, processing storage densityreconfigurations method 600 requires only conducting the thirddetermination after detecting the trigger condition (e.g., method 800 ofFIGS. 8A-8B, described in detail below). In yet other embodiments, afterdetecting the trigger condition, processing storage densityreconfigurations method 600 requires conducting either the seconddetermination or the third determination and optionally conducting theother determination (e.g., method 700, FIGS. 7A-7C, described in detailbelow). Moreover, the particular order in which the first, second, andthird determinations are conducted can be varied in differentembodiments. For example, in some embodiments, the second and thirddeterminations are performed prior to the first determination. As anadditional example, in some embodiments, the third determination isperformed prior to the second determination and the first determinationcan be performed before, after, or in between the third and seconddeterminations, respectively.

Additional details concerning each of the processing steps forprocessing storage density reconfigurations method 600, as well asdetails concerning additional processing steps for storage densityreconfigurations, are presented below with reference to FIGS. 7A-7C andFIGS. 8A-8B.

FIGS. 7A-7C illustrate flowchart representations of a method ofprocessing storage density reconfigurations within a storage system, inaccordance with some embodiments. With reference to the data storagesystem 100 pictured in FIG. 1, in some embodiments, a method 700 isperformed by a storage device (e.g., storage device 120) or one or morecomponents of the storage device (e.g., storage controller 124). In someembodiments, the method 700 is governed by instructions that are storedin a non-transitory computer-readable storage medium and that areexecuted by one or more processors of a device, such as the one or moreprocessing units (CPUs) 122-1 of management module 121-1 (FIG. 2). Insome embodiments, some of the operations of method 700 are performed ata host system (e.g., computer system 110) that is operatively coupledwith the storage device and other operations of method 700 are performedat the storage device. In some embodiments, method 700 is governed, atleast in part, by instructions that are stored in a non-transitorycomputer-readable storage medium and that are executed by one or moreprocessors of the host system (the one or more processors of the hostsystem are not shown in FIG. 1). For ease of explanation, the followingdescribes method 700 as performed by the storage device (e.g., bystorage controller 124 of storage device 120, FIG. 1). With reference toFIG. 2, in some embodiments, the operations of method 700 are performed,at least in part, by a metric maintaining module (e.g., metricmaintaining module 224, FIG. 2), a trigger condition detection module(e.g., trigger condition detection module 228, FIG. 2), areconfiguration module (e.g., reconfiguration module 230, FIG. 2), andan over-provisioning module (e.g., over-provisioning module 222, FIG. 2)of management module 121-1.

A storage device (e.g., storage device 120, FIG. 1) optionally maintains(702) one or more status metrics for each memory portion of a pluralityof NVM portions (e.g., each page, block, superblock, or die plane) ofthe storage device. In some embodiments, a respective status metric fora respective memory portion corresponds to the respective memoryportion's ability to retain data (704). In some embodiments, the storagedevice optionally maintains one or more status metrics for each of oneor more memory devices (e.g., one or more die on one or more storagemediums 132, FIG. 1) of the storage device (706). Accordingly, in someembodiments, a first status metric of the one or more status metricscorresponds to a respective memory device's ability to retain data(708). Exemplary status metrics for memory portions and memory devicesare discussed in more detail above (see, e.g., descriptions of FIGS.3A-3C, above).

The storage device (or a component thereof, such as trigger conditiondetection module 228, FIG. 2) detects (710) a trigger condition withrespect to one or more NVM portions of the plurality of NVM portions(e.g., one or more die plane, blocks, superblocks, pages, or otherpredefined NVM portion) of the storage device. The storage deviceincludes (712) a storage controller (e.g., storage controller 124,FIG. 1) and the plurality of NVM portions in the one or more memorydevices (e.g., one or more die on one or more storage mediums 132, FIG.1). In some embodiments, the one or more memory devices include (714)one or more flash memory devices (e.g., one or more flash memory die).

In accordance with a determination that at least one of the one or morestatus metrics (e.g., one or more of the status metrics 304-a(4) through304-a(7), FIG. 3A) for the one or more NVM portions satisfies athreshold (718), the storage device detects the trigger condition as tothe one or more NVM portions. In some embodiments, the one or morestatus metrics are retrieved from a mapping record associated with theone or more NVM portions in a mapping data structure (e.g., one or moremapping records for the one or more NVM portions in reverse mappingtable(s) 304, FIG. 3A). The trigger condition can be with respect to asingle memory portion or it can be a collective trigger condition withrespect to multiple memory portions that are not necessarily contiguous(e.g., one or more blocks that are on two distinct die). For example,the trigger condition can be detected when at least N TLC-encoded blocks(e.g., 10 blocks) have P/E counts in excess of C (e.g., a value equal to95% of the projected maximum P/E for a typical TLC-encoded block). Inanother example, the trigger condition is detected when an estimatednumber of remaining bytes written or estimated number of P/E cyclesremaining for the one or more memory portions is below a predeterminednumber. In one additional example, the trigger condition is detectedwhen the BER of the one or more NVM portions is above a predeterminedBER threshold. In yet one more example, the trigger condition isdetected when a combined status metric for the one or more NVM portionsno longer meets (e.g., is below) a predetermined threshold. In someembodiments, the status metric is produced by an algorithm that accountsfor a plurality of status metrics associated with the one or more NVMportions (as discussed above, for example, in reference to FIGS. 3A-3C).The one or more NVM portions are configured (716) (i.e., prior toreconfiguration) to store data encoded in a first encoding format andhaving a first storage density (e.g., TLC encoding format with a storagedensity of 3 bits per cell) corresponding to the first encoding format.

Turning now to FIG. 7B, in response to detecting the trigger condition,and in accordance with a first determination that a projected amount ofover-provisioning meets predefined over-provisioning criteria (e.g., theprojected over-provisioning is greater than a minimum acceptable amountof over-provisioning for the storage device), the storage device (or acomponent thereof, such as reconfiguration module 230, FIG. 2)reconfigures (720) the one or more NVM portions of the storage device tostore data in a second encoding format and having a second storagedensity corresponding to the second encoding format. For example, thereconfiguration module 230 reconfigures one or more blocks from storingdata using TLC mode to storing data using MLC mode or SLC mode. Theprojected amount of over-provisioning corresponds (722) toover-provisioning for the storage device after (e.g., that would resultfrom) reconfiguring the one or more NVM portions of the storage deviceto store data encoded in the second encoding format and having thesecond storage density. In some embodiments, the projected amount ofover-provisioning meets the predefined over-provisioning criteria onlywhen the projected amount of over-provisioning is greater than apredetermined minimum amount of over-provisioning for the storagedevice.

In some embodiments, the projected amount of over-provisioning isdetermined by an over-provisioning module (e.g., over-provisioningmodule 222, FIG. 2). Determining the projected amount ofover-provisioning allows the storage device to proactively monitor andmanage over-provisioning levels before reconfiguring the one or more NVMportions (as explained above in reference to processing step 608, FIG.6). Thus, the storage device uses the predefined over-provisioningcriteria to ensure that over-provisioning levels remain acceptable. Insome embodiments, the predefined over-provisioning criteria include arange of acceptable levels for over-provisioning levels in the storagedevice that account for age of the storage device (e.g., in someembodiments, less over-provisioning is acceptable as the storage deviceages).

Typically, the second storage density is a lower storage density thanthe first storage density (724), and the storage device has reducedover-provisioning after the reconfiguring. In some embodiments, thestorage controller monitors the storage capacity of each of the one ormore memory devices of the storage device as a whole by reconfiguringmemory portions as they wear over time, which reduces the size of thestorage device's over-provisioning pool, while avoiding reductions indeclared storage capacity. In some embodiments, the storage devicemaintains a predetermined minimum amount of over-provisioning and ifreconfiguring the one or more memory portions would result in reducingthe amount of over-provisioning below the predetermined minimum amount,then the storage device forgoes reconfiguring the one or more memoryportions. In this way, the storage device ensures that the predeterminedminimum amount of over-provisioning is maintained.

In some embodiments, the projected amount of over-provisioning includes(726) a first quantity of storage units in the storage device, includingmapped storage units remaining after reconfiguring the one or more NVMportions and unmapped storage units that are usable for storing data andthat are remaining after reconfiguring the one or more NVM portions, andsubtracting from the first quantity a quantity corresponding to adeclared storage capacity of the storage device. In some embodiments,the storage units are SLC-configured erase blocks and MLC-configurederase blocks, or pages, or other memory portions, and the quantity ofstorage units is, for example, two storage units for each MLC-configurederase block and one storage unit for each SLC-configured erase block.

Turning now to FIG. 7C, in some embodiments, the storage device (or acomponent thereof, such as metric maintaining module 224, FIG. 2)determines (i) a current endurance metric for the plurality of NVMportions of the storage device and (ii) an estimated endurance metricfor the plurality of NVM portions, corresponding to an estimated (orprojected) endurance for the plurality of NVM portions after thereconfiguring (728). As a non-limiting example of determining thecurrent endurance metric for the plurality of NVM portions, the metricmaintaining module 224 retrieves current endurance metrics for each NVMportion of the plurality of NVM portions and then determines an overallcurrent endurance metric for the plurality of NVM portions based on theindividual values (e.g., a sum, an average, or a weighted average basedon usage histories for each NVM portion).

As a non-limiting example of determining the estimated endurance metric,the metric maintaining module 224 retrieves a status metric for each ofthe one or more NVM portions (e.g., from one or more mapping records(e.g., mapping record 304-a, FIG. 3A, or characterization vectors 350,FIG. 3C) and queries an endurance estimation table (e.g., enduranceestimation table 226) to retrieve the estimated endurance at the newencoding format (e.g., second encoding format for the one or more NVMportions) that corresponds to the retrieved status metric. For example,if a particular NVM portion (e.g., a first block) of the one or more NVMportions has a retrieved status metric of Metric-2 and the new encodingformat is SLC, then the estimated endurance for the first block is 19800P/E cycles (98% endurance). Estimated endurance is retrieved for eachmemory portion of the one or more memory portions and the retrievedestimated endurance values are then used to determine estimatedendurance for the plurality of NVM portions. In some embodiments, theretrieved estimated endurance values (or an average thereof) is/areadded to current endurance values (or an average thereof) for NVMportions in the plurality of NVM portions that are not beingreconfigured and then this overall sum is divided by the number of NVMportions in the plurality of NVM portions. In some embodiments, theestimated endurance for the plurality of NVM portions is given by theformula: ((average endurance of memory portions in TLC encoding format*#blocks in TLC encoding format)+(average endurance of blocks in lowerencoding levels*# of blocks in lower encoding levels))/total # blocks.

In some embodiments, the current endurance metric for the plurality ofNVM portions corresponds (730) to an average value of an endurancemetric with respect to the plurality of NVM portions, and the estimatedendurance metric for the plurality of NVM portions corresponds to aprojected average value of the endurance metric with respect to theplurality of NVM portions after (i.e., that would result from) thereconfiguring. In some embodiments, the endurance metric with respect toa single memory portion of the plurality of NVM portions is a valuecorresponding (732) to a projected number of write operations that canbe performed, prior to end of life, by the single memory portion, or aprojected number of program/erase cycles that can be performed, prior toend of life, by the single memory portion.

In some embodiments, the storage device (or a component thereof, such asreconfiguration module 230, FIG. 2) reconfigures (734) the one or moreNVM portions to store data encoded in the second encoding format andhaving the second storage density in accordance with the firstdetermination that the projected amount of over-provisioning meets thepredefined over-provisioning criteria and in accordance with a seconddetermination that the estimated endurance metric reflects animprovement over the current endurance metric in accordance withpredefined endurance improvement criteria (e.g., the estimated enduranceis greater than the current endurance metric). In this way, the storagedevice considers both over-provisioning levels in the storage device andimprovements to endurance, prior to reconfiguring memory portions. Insome embodiments, the estimated endurance metric comprises animprovement over the current endurance metric in accordance withpredefined endurance improvement criteria when the estimated endurancemetric is larger than the current endurance metric. In some otherembodiments, the estimated endurance metric comprises an improvementover the current endurance metric in accordance with predefinedendurance improvement criteria when the estimated endurance metric islarger than the current endurance metric by at least a predefinedthreshold amount.

In some embodiments, after reconfiguring the one or more memoryportions, the storage device determines one or more updated statusmetrics for the one or more memory portions. For example, afterreconfiguring a first block from TLC encoding format to SLC encodingformat, the storage device performs an erase operation at the firstblock, writes test data to the first block, and then reads back the testdata from the first block in order to measure an updated BER for thefirst block. In some embodiments, the storage device additionally oralternatively determines updated status metrics at predefined timeintervals (e.g., once per day, once every two days, or once every week).In other embodiments, the storage device additionally or alternativelydetermines updated status metrics after a predetermined number of P/Ecycles for each memory portion (e.g., after every 30, 35, 40, 45, 50,55, 60, 65, 70, or 75 P/E cycles). In some embodiments, the storagedevice dynamically determines the predetermined number of P/E cycles foreach memory portion while, in other embodiments, the predeterminednumber of P/E cycles is set by a manufacturer of the storage devicebased on usage histories for similar storage devices.

In some embodiments, in accordance with a determination that the one ormore status metrics for a respective memory device of the one or morememory devices satisfy one or more end-of-life criteria (e.g., theover-provisioning pool has reached or is projected to reach or fallbelow a predefined minimum size, and/or remaining endurance of thestorage device has reached or projected remaining endurance of thestorage device is projected to reach or fall below a predefined minimumremaining endurance), the storage device operates (736) the respectivememory device in read-only mode.

FIGS. 8A-8B illustrate flowchart representations of a method ofprocessing storage density reconfigurations within a storage system, inaccordance with some embodiments. With reference to the data storagesystem 100 pictured in FIG. 1, in some embodiments, a method 800 isperformed by a storage device (e.g., storage device 120) or one or morecomponents of the storage device (e.g., storage controller 124). In someembodiments, the method 800 is governed by instructions that are storedin a non-transitory computer-readable storage medium and that areexecuted by one or more processors of a device, such as the one or moreprocessing units (CPUs) 122-1 of management module 121-1 (FIG. 2). Insome embodiments, some of the operations of method 800 are performed ata host system (e.g., computer system 110) that is operatively coupledwith the storage device and other operations of method 800 are performedat the storage device. In some embodiments, method 800 is governed, atleast in part, by instructions that are stored in a non-transitorycomputer-readable storage medium and that are executed by one or moreprocessors of a host (the one or more processors of the host system arenot shown in FIG. 1). For ease of explanation, the following describesmethod 800 as performed by the storage device (e.g., by storagecontroller 124 of storage device 120, FIG. 1). With reference to FIG. 2,in some embodiments, the operations of method 800 are performed, atleast in part, by a metric maintaining module (e.g., metric maintainingmodule 224, FIG. 2), a trigger condition detection module (e.g., triggercondition detection module 228, FIG. 2), and a reconfiguration module(e.g., reconfiguration module 230, FIG. 2) of management module 121-1.

A storage device (e.g., storage device 120, FIG. 1) optionally maintains(802) one or more status metrics for each memory portion of a pluralityof NVM portions (e.g., each page, block, superblock, or die plane) ofthe storage device. In some embodiments, a respective status metric fora respective memory portion corresponds to the respective memoryportion's ability to retain data (804). In some embodiments, the storagedevice optionally maintains one or more status metrics for each of oneor more memory devices (e.g., one or more die on one or more storagemediums 132, FIG. 1) of the storage device (806). Accordingly, in someembodiments, a first status metric of the one or more status metricscorresponds to a respective memory device's ability to retain data(808). Exemplary status metrics for memory portions and memory devicesare discussed in more detail above (see, e.g., descriptions of FIGS.3A-3C, above).

The storage device (or a component thereof, such as trigger conditiondetection module 228, FIG. 2) detects (810) a trigger condition withrespect to one or more NVM portions of the plurality of NVM portions(e.g., one or more die plane, blocks, superblocks, pages, or otherpredefined NVM portions) of the storage device. The storage deviceincludes (812) a storage controller (e.g., storage controller 124,FIG. 1) and the plurality of NVM portions in the one or more memorydevices. In some embodiments, the one or more memory devices include(814) one or more flash memory devices. The one or more NVM portions areconfigured (816) to store data encoded in a first encoding format have afirst storage density (e.g., TLC encoding format with a storage densityof 3 bits per cell) corresponding to the first encoding format.

In some embodiments, in accordance with a determination that at leastone of the one or more status metrics for the one or more NVM portionssatisfies a threshold (818), the storage device detects the triggercondition as to the one or more NVM portions. The trigger condition canbe with respect to a single memory portion (e.g., a single block) or itcan be a collective trigger condition with respect to multiple memoryportions that are not necessarily contiguous. The exemplary triggerconditions provided above in reference to processing step 718 of method700 apply to processing step 818 of method 800 as well.

Turning now to FIG. 8B, in accordance with detecting the triggercondition, the storage device determines (i) a current endurance metricfor the plurality of NVM portions of the storage device and (ii) anestimated endurance metric for the plurality of NVM portions, theestimated endurance metric corresponding to an estimated endurance forthe plurality of NVM portions after a reconfiguration of the one or moreNVM portions to store data encoded in a second encoding format andhaving a second storage density corresponding to the second encodingformat (820). In some embodiments, the second storage density is a lowerstorage density than the first storage density (822). The explanationsprovided above in reference to processing step 728 of method 700 (e.g.,regarding exemplary ways to determine the current and estimatedendurance metrics) apply as well to processing step 820 of method 800.

In some embodiments, the current endurance metric for the plurality ofNVM portions corresponds (824) to an average value of an endurancemetric with respect to the plurality of NVM portions, and the estimatedendurance metric for the plurality of NVM portions corresponds to aprojected average value of the endurance metric with respect to theplurality of NVM portions after (i.e., that would result from) thereconfiguring. In some embodiments, the endurance metric with respect toa single memory portion of the plurality of NVM portions is a valuecorresponding (826) to a projected number of write operations that canbe performed, prior to end of life, by the single memory portion, or aprojected number of program/erase cycles that can be performed, prior toend of life, by the single memory portion.

In accordance with detecting the trigger condition and in accordancewith a determination that reconfiguration criteria are satisfied, thestorage device (or a component thereof, such as reconfiguration module230, FIG. 2) reconfigures (828) the one or more non-volatile memoryportions of the storage device to store data encoded in the secondencoding format and having the second storage density. In someembodiments, the reconfiguration criteria include (830) a determinationthat the estimated endurance metric reflects an improvement over thecurrent endurance metric in accordance with predefined enduranceimprovement criteria. In some embodiments, the estimated endurancemetric comprises an improvement over the current endurance metric inaccordance with predefined endurance improvement criteria when theestimated endurance metric is larger than the current endurance metric.In some other embodiments, the estimated endurance metric comprises animprovement over the current endurance metric in accordance withpredefined endurance improvement criteria when the estimated endurancemetric is larger than the current endurance metric by at least apredefined threshold amount.

In some embodiments, in accordance with a determination that the one ormore status metrics for a respective memory device of the one or morememory devices satisfy one or more EOL criteria (e.g., remainingendurance of the storage device has reached or projected remainingendurance of the storage device is projected to reach or fall below apredefined minimum remaining endurance), the storage device operates(832) the respective memory device in read-only mode.

It will be understood that, although the terms “first,” “second,” etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another. For example, a first region could be termed asecond region, and, similarly, a second region could be termed a firstregion, without changing the meaning of the description, so long as alloccurrences of the “first region” are renamed consistently and alloccurrences of the “second region” are renamed consistently. The firstregion and the second region are both regions, but they are not the sameregion.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the claims. Asused in the description of the embodiments and the appended claims, thesingular forms “a,” “an” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. It willalso be understood that the term “and/or” as used herein refers to andencompasses any and all possible combinations of one or more of theassociated listed items. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof.

As used herein, the phrase “at least one of A, B and C” is to beconstrued to require one or more of the listed items, and this phasereads on a single instance of A alone, a single instance of B alone, ora single instance of C alone, while also encompassing combinations ofthe listed items such “one or more of A and one or more of B without anyof C,” and the like.

As used herein, the term “if” may be construed to mean “when” or “upon”or “in response to determining” or “in accordance with a determination”or “in response to detecting,” that a stated condition precedent istrue, depending on the context. Similarly, the phrase “if it isdetermined [that a stated condition precedent is true]” or “if [a statedcondition precedent is true]” or “when [a stated condition precedent istrue]” may be construed to mean “upon determining” or “in response todetermining” or “in accordance with a determination” or “upon detecting”or “in response to detecting” that the stated condition precedent istrue, depending on the context.

The foregoing description, for purpose of explanation, has beendescribed with reference to specific embodiments. However, theillustrative discussions above are not intended to be exhaustive or tolimit the claims to the precise forms disclosed. Many modifications andvariations are possible in view of the above teachings. The embodimentswere chosen and described in order to best explain principles ofoperation and practical applications, to thereby enable others skilledin the art.

What is claimed is:
 1. A method of operation in a storage device that comprises a storage controller and a plurality of non-volatile memory portions in one or more memory devices, the method comprising: at the storage controller, the storage controller having one or more physical processors and memory: detecting a trigger condition with respect to one or more non-volatile memory portions of the storage device, wherein the one or more non-volatile memory portions are configured to store data encoded in a first encoding format and having a first storage density corresponding to the first encoding format; in accordance with detecting the trigger condition: determining a current endurance metric for the plurality of non-volatile memory portions of the storage device; determining an estimated endurance metric for the plurality of non-volatile memory portions of the storage device, the estimated endurance metric corresponding to an estimated endurance for the plurality of non-volatile memory portions of the storage device after a reconfiguration of the one or more non-volatile memory portions of the storage device to store data encoded in a second encoding format and having a second storage density; and in accordance with a determination that reconfiguration criteria are satisfied, reconfiguring the one or more non-volatile memory portions of the storage device to store data encoded in the second encoding format and having the second storage density, the reconfiguration criteria including a determination that the estimated endurance metric comprises an improvement over the current endurance metric in accordance with predefined endurance improvement criteria.
 2. The method of claim 1, wherein the second storage density is a lower storage density than the first storage density.
 3. The method of claim 1, wherein the current endurance metric for the plurality of non-volatile memory portions corresponds to an average value of an endurance metric with respect to the plurality of non-volatile memory portions, and the estimated endurance metric for the plurality of non-volatile memory portions of the storage device corresponds to a projected average value of the endurance metric with respect to the plurality of non-volatile memory portions after the reconfiguring.
 4. The method of claim 3, wherein the endurance metric with respect to a single memory portion of the plurality of non-volatile memory portions is a value corresponding to a projected number of write operations that can be performed, prior to end of life, by the single memory portion, or a projected number of program/erase cycles that can be performed, prior to end of life, by the single memory portion.
 5. The method of claim 1, further comprising: maintaining one or more status metrics for each memory portion of the plurality of non-volatile memory portions of the storage device, wherein a respective status metric for a respective memory portion corresponds to the respective memory portion's ability to retain data; wherein detecting the trigger condition comprises: in accordance with a determination that at least one of the one or more status metrics for the one or more non-volatile memory portions of the storage device satisfies a threshold, detecting the trigger condition as to the one or more non-volatile memory portions of the storage device.
 6. The method of claim 1, further comprising: maintaining one or more status metrics for each of the one or more memory devices, wherein a first status metric of the one or more status metrics corresponds to a respective memory device's ability to retain data; and in accordance with a determination that the one or more status metrics for a respective memory device of the one or more memory devices satisfy one or more end-of-life criteria, operating the respective memory device in read-only mode.
 7. The method of claim 1, wherein the one or more memory devices comprise one or more flash memory devices.
 8. A storage device, comprising: a set of one or more non-volatile memory devices, the set of one or more non-volatile memory devices including a plurality of non-volatile memory portions; and a storage controller, the storage controller including one or more controller modules configured to: detect a trigger condition with respect to one or more non-volatile memory portions of the storage device, wherein the one or more non-volatile memory portions are configured to store data encoded in a first encoding format and having a first storage density corresponding to the first encoding format; and determine an estimated endurance metric for the plurality of non-volatile memory portions of the storage device, the estimated endurance metric corresponding to an estimated endurance for the plurality of non-volatile memory portions of the storage device after a reconfiguration of the one or more non-volatile memory portions of the storage device to store data encoded in a second encoding format and having a second storage density corresponding to the second encoding format; and reconfigure, in accordance with a determination that reconfiguration criteria are satisfied, the one or more non-volatile memory portions of the storage device to store data encoded in the second encoding format and having the second storage density, the reconfiguration criteria including a determination that the estimated endurance metric comprises an improvement over the current endurance metric in accordance with predefined endurance improvement criteria.
 9. The storage device of claim 8, wherein the one or more controller modules include: a trigger condition detection module to detect the trigger condition; a metric maintaining module to determine the estimated endurance metric; and a reconfiguration module to reconfigure the one or more non-volatile memory portions of the storage device in response to the trigger condition and in accordance with the determination that the reconfiguration criteria are satisfied.
 10. The storage device of claim 8, wherein the second storage density is a lower storage density than the first storage density.
 11. The storage device of claim 8, wherein the current endurance metric for the plurality of non-volatile memory portions corresponds to an average value of an endurance metric with respect to the plurality of non-volatile memory portions, and the estimated endurance metric for the plurality of non-volatile memory portions of the storage device corresponds to a projected average value of the endurance metric with respect to the plurality of non-volatile memory portions after the reconfiguring.
 12. The storage device of claim 11, wherein the endurance metric with respect to a single memory portion of the plurality of non-volatile memory portions is a value corresponding to a projected number of write operations that can be performed, prior to end of life, by the single memory portion, or a projected number of program/erase cycles that can be performed, prior to end of life, by the single memory portion.
 13. The storage device of claim 8, wherein the one or more controller modules are further configured to: maintain one or more status metrics for each memory portion of the plurality of non-volatile memory portions of the storage device, wherein a respective status metric for a respective memory portion corresponds to the respective memory portion's ability to retain data; wherein detecting the trigger condition comprises: in accordance with a determination that at least one of the one or more status metrics for the one or more non-volatile memory portions of the storage device satisfies a threshold, detecting the trigger condition as to the one or more non-volatile memory portions of the storage device.
 14. The storage device of claim 8, wherein the one or more controller modules are further configured to: maintain one or more status metrics for each of the one or more memory devices, wherein a first status metric of the one or more status metrics corresponds to a respective memory device's ability to retain data; and in accordance with a determination that the one or more status metrics for a respective memory device of the one or more memory devices satisfy one or more end-of-life criteria, operate the respective memory device in read-only mode.
 15. The storage device of claim 8, wherein the one or more memory devices comprise one or more flash memory devices.
 16. A non-transitory computer readable storage medium, storing one or more programs configured for execution by one or more processors of a storage device having a set of one or more non-volatile memory devices, the set of one or more non-volatile memory devices including a plurality of non-volatile memory portions, and a storage controller, the one or more programs including instructions that when executed by the one or more processors cause the storage device to: detect a trigger condition with respect to one or more non-volatile memory portions of the storage device, wherein the one or more non-volatile memory portions are configured to store data encoded in a first encoding format and having a first storage density corresponding to the first encoding format; and determine an estimated endurance metric for the plurality of non-volatile memory portions of the storage device, the estimated endurance metric corresponding to an estimated endurance for the plurality of non-volatile memory portions of the storage device after a reconfiguration of the one or more non-volatile memory portions of the storage device to store data encoded in a second encoding format and having a second storage density corresponding to the second encoding format; and reconfigure, in accordance with a determination that reconfiguration criteria are satisfied, the one or more non-volatile memory portions of the storage device to store data encoded in the second encoding format and having the second storage density, the reconfiguration criteria including a determination that the estimated endurance metric comprises an improvement over the current endurance metric in accordance with predefined endurance improvement criteria.
 17. The non-transitory computer readable storage medium of claim 16, wherein the second storage density is a lower storage density than the first storage density.
 18. The non-transitory computer readable storage medium of claim 16, wherein the current endurance metric for the plurality of non-volatile memory portions corresponds to an average value of an endurance metric with respect to the plurality of non-volatile memory portions, and the estimated endurance metric for the plurality of non-volatile memory portions of the storage device corresponds to a projected average value of the endurance metric with respect to the plurality of non-volatile memory portions after the reconfiguring.
 19. The non-transitory computer readable storage medium of claim 18, wherein the endurance metric with respect to a single memory portion of the plurality of non-volatile memory portions is a value corresponding to a projected number of write operations that can be performed, prior to end of life, by the single memory portion, or a projected number of program/erase cycles that can be performed, prior to end of life, by the single memory portion.
 20. The non-transitory computer readable storage medium of claim 16, wherein the one or more programs are further configured to: maintaining one or more status metrics for each memory portion of the plurality of non-volatile memory portions of the storage device, wherein a respective status metric for a respective memory portion corresponds to the respective memory portion's ability to retain data; wherein detecting the trigger condition comprises: in accordance with a determination that at least one of the one or more status metrics for the one or more non-volatile memory portions of the storage device satisfies a threshold, detecting the trigger condition as to the one or more non-volatile memory portions of the storage device. 